METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a crystalline semiconductor film having crystal grains of a grain size not less than the conventional one in a laser irradiator having a lower running cost than the conventional one and a laser irradiating method using the same, thereby forming a TFT using the crystalline semiconductor film for realizing a TFT of high-speed performance. SOLUTION: For irradiating a semiconductor film with a laser beam having a short output time from a laser optical source, the semiconductor film is irradiated with a combined laser beam of one laser beam and a delayed laser beam therefrom to moderate the cooling rate or the semiconductor film. This enables the forming of a crystalline semiconductor film having crystal grains of a grain size not less than that formed by irradiating the semiconductor film with a laser beam having a long output time. A TFT is manufactured using such crystalline semiconductor film, thereby realizing a TFT of high-speed performance.