| 摘要 |
PROBLEM TO BE SOLVED: To efficiently compensate defects without causing increase of waiting time due to read of defect data from a nonvolatile memory. SOLUTION: The read of the defect data is performed from an EEPROM 118 to a RAM 112a not by every application of power but based on recognition of mounting of a battery. In addition, additional write of the defect data newly detected by a defect data detecting part 112c to the EEPROM 118 is performed by every application of power. Consequently, use of control that the read of the defect data from the EEPROM 118 is performed, for example, only once after mounting the battery is enabled and the waiting time is reduced.
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