发明名称 INTEGRATED CIRCUIT DEVICE PREVENTING SHORT CIRCUIT EFFECTIVELY AND ITS FABRICATING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an integrated circuit device comprising a microelectronic substrate and a conductive layer formed thereon. SOLUTION: The integrated circuit device comprises a microelectronic substrate 100, a conductive layer 107 formed thereon, an insulation layer 108 formed on the conductive layer 107 and including a protrusion extending above the conductive layer 107, and a side wall insulating region 110a provided on the side face of the conductive layer 107 contiguously to one side wall thereof and extending between the protrusion of the insulation layer 108 and the microelectronic substrate 100.
申请公布号 JP2002280452(A) 申请公布日期 2002.09.27
申请号 JP20020009100 申请日期 2002.01.17
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM HYOUNG-JOON;PARK YOUNG-WOOK;NAN HEIIN
分类号 H01L21/28;H01L21/302;H01L21/3065;H01L21/3205;H01L21/60;H01L21/768;H01L21/8242;H01L23/522;H01L27/10;H01L27/108;(IPC1-7):H01L21/768;H01L21/306;H01L21/320;H01L21/824 主分类号 H01L21/28
代理机构 代理人
主权项
地址