| 摘要 |
PROBLEM TO BE SOLVED: To provide methods for evaluating a dielectric film, calibrating thermal treatment equipment, and manufacturing a semiconductor memory device, thereby the crystallinity or the relative permittivity of a dielectric film can be easily estimated without fail, and a time-lapse shift or variation in temperature of the thermal treatment equipment can be calibrated accurately. SOLUTION: When applying thermal treatment to a tantalum oxide film 2 deposited on a silicon wafer 1 in an atmosphere of oxygen in order to improve the crystallinity, the change in the crystallinity or in the relative permittivity of the dielectric film is evaluated by the measurement of the index of refraction using an ellipsometer and the adequacy of the thermal treatment temperature is determined. Particularly when the dielectric film contains the tantalum oxide film 2 whose crystallinity is changed by the thermal treatment and a silicon oxide film 3 whose film thickness is varied by the thermal treatment, it is possible to accurately evaluate the thermal treatment temperature by utilizing the fact that the thermal treatment temperature and the index of refraction of a laminated film can be correlated to each other by a curve that has local maxima and minima points.
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