NITRIDE SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device which can improve a yield at the time of junction down assembly, can obtain a satisfactory heat radiating characteristic and can prevent element life deterioration. SOLUTION: The device is provided with a p-side electrode 10 formed so that it is brought into contact with the exposed upper face of a ridge part and a p-side pad electrode 11 which is formed on the p-side electrode 10 and has the large thickness of about 3μm. The total thickness (about 3μm) of the p-side electrode 10 and the p-side pad electrode 11 is larger than a distance (about 1.0μm to about 2.1μm) from the lower face of an n-type clad layer 3 below an MQW active layer 4 to the upper face of the ridge part.