发明名称 BREAK PATTERN OF SILICON WAFER, SILICON SUBSTRATE AND METHOD FOR MANUFACTURING THE BREAK PATTERN
摘要 PROBLEM TO BE SOLVED: To stabilize a break position and shape of a silicon wafer and decrease chips. SOLUTION: With a break scheduled line L1 of a silicon wafer 10 as a center line, through holes 14 are disposed in a cross-stitch manner with predetermined spaces. A long side is structured by a (111) first face 12 and a short side is structured by a (111) second face 13 which crosses the (111) first face 12 and is perpendicular to a (110) face to form a long and slender parallelogram. The through hole 14 is structured by the hole of this parallelogram, and the one (111) first face 12 is disposed in the break scheduled line L1 in such through holes.
申请公布号 JP2002313754(A) 申请公布日期 2002.10.25
申请号 JP20010116905 申请日期 2001.04.16
申请人 SEIKO EPSON CORP 发明人 WANIBE AKIHISA;OKAZAWA NOBUAKI;MIYATA YOSHINAO;SHINPO TOSHINAO;AKASU TETSUYA;AKACHI TAKASHI
分类号 H01L21/306;B32B3/10;B65D65/28;G09F3/00;H01L21/301;H01L21/302;H01L21/304;H01L21/46;H01L21/461;H01L21/78;(IPC1-7):H01L21/301 主分类号 H01L21/306
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