发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To drive a word line to a selection state at a high speed, without making the array occupancy area or manufacturing processes increased. SOLUTION: A first layer metal wiring 7 of the lower layer of a third layer metal wiring 9 which serves as a main word line MWL is used as wiring for shunting and connected to first layer polysilicon wiring 3, constituting a sub word line SWL electrically at prescribed intervals. By applying both a hierarchical word structure and a word line piping structure, the sub word line is driven to the selected state at a high speed.
申请公布号 JP2002319634(A) 申请公布日期 2002.10.31
申请号 JP20010124350 申请日期 2001.04.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 TOMISHIMA SHIGEKI
分类号 G11C11/407;G11C5/06;G11C8/14;G11C11/401;G11C11/408;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 主分类号 G11C11/407
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