| 发明名称 |
METHOD FOR IMPROVED FORMING OF SALICIDE STRUCTURE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-quality silicide layer having a high sheet resistance. SOLUTION: A method of preparing a semiconductor material for forming the silicide layer in selected areas is disclosed. In the representative embodiment, the method includes a step of removing at least one of a nitride film and an oxynitride film from the selected area, a step of removing metallic particles from the selected area, and a step of removing surface particles from the selected area. The method also includes a step of removing organics from the selected areas and a step of removing an oxide film layer from the selected areas.
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| 申请公布号 |
JP2002334850(A) |
申请公布日期 |
2002.11.22 |
| 申请号 |
JP20020096570 |
申请日期 |
2002.03.29 |
| 申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
GIEWONT KENNETH J;WANG YUN YU;RUSSELL AANTO;RANSOM CRAIG;COFFIN JUDITH;DOMENICUCCI ANTHONY;MACDONALD MICHAEL;JOHNSON BRIAN E |
| 分类号 |
H01L21/28;H01L21/02;H01L21/306;H01L21/311;H01L21/336;H01L29/78;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
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