| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent the peeling of an insulating film caused by insulating films different in stress being stacked, and its manufacturing method. SOLUTION: The semiconductor device has a plurality of wiring layers 6 and 14 stacked on a substrate and an interlayer insulating film made between wiring layers. The interlayer insulating film is a stacked film which includes an inorganic insulating film and organic insulating films 2 and 10, and whose inorganic film is a stacked film which includes a silicon oxide layer 7, a silicon nitride layer 8, and a silicon oxidized nitride layer 9 made between these layers, preferably, a semiconductor layer whose silicon oxidized nitride layer is higher in oxygen/nitrogen ratio on the side close to the silicon nitride layer than on the side close to the silicon nitride layer 8, and its manufacturing method.
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