发明名称 |
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
摘要 |
A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
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申请公布号 |
US2002175338(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US20020134895 |
申请日期 |
2002.04.30 |
申请人 |
SARAYAMA SEIJI;YAMANE HISANORI;SHIMADA MASAHIKO;KUMANO MASAFUMI;IWATA HIROKAZU;ARAKI TAKASHI |
发明人 |
SARAYAMA SEIJI;YAMANE HISANORI;SHIMADA MASAHIKO;KUMANO MASAFUMI;IWATA HIROKAZU;ARAKI TAKASHI |
分类号 |
C30B9/00;C30B11/00;H01L33/00;H01S5/323;(IPC1-7):H01L33/00 |
主分类号 |
C30B9/00 |
代理机构 |
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地址 |
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