| 摘要 |
PURPOSE: To solve the problem that a transmission side FET and a reception side FET are formed in a high frequency band of 2.4 GHz or higher are formed in an asymmetric circuits, having channel regions of different impurity concentration, a gate width is reduced to 400 μm, a capacity component by a gate electrode is reduced, a redetermined isolation is obtained between both signal routes, and a circuit which can output a desired maximum linear power is realized, but the power is insufficient in a user's stringent demand for distortion, and an increase in an Idss is limited only by a control of channel-forming conditions. CONSTITUTION: One gate width is set to 500 μm, and the channel-forming conditions are controlled to assure the maximum linear input power by assuring the Idss.
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