PATTERN FORMATION METHOD

摘要

According to one embodiment, at first, a first resist film made from a first radiation sensitive composition is formed on a processing object film. Then, light exposure and development to the first resist film are performed to form a first resist pattern. Thereafter, an insolubilization process to insolubilize the first resist pattern to a solvent of a second radiation sensitive composition is performed. Then, a second resist film made from the second radiation sensitive composition is formed on the first resist pattern. Then, light exposure and development to the second resist film are performed to form a second resist pattern. At least one of the first radiation sensitive composition and the second radiation sensitive composition is made of a polymer compound resistant to oxygen that is present at the time of plasma etching.

主权项

1. A pattern formation method comprising:
forming a first resist film made from a first radiation sensitive composition on a processing object film; performing light exposure and development to the first resist film to form a first resist pattern; performing an insolubilization process to insolubilize the first resist pattern to a solvent of a second radiation sensitive composition; forming a second resist film made from the second radiation sensitive composition on the first resist pattern; and performing light exposure and development to the second resist film to form a second resist pattern, wherein at least one of the first radiation sensitive composition and the second radiation sensitive composition is made of a polymer compound resistant to oxygen that is present at the time of plasma etching.