| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, and its fabricating method, in which a signal processing transistor can be formed without being influenced by the forming conditions of a PIN diode for photoelectric conversion and the characteristics of the transistor can be adjusted easily. SOLUTION: The semiconductor device comprises a first conductivity type semiconductor substrate 7, an intrinsic semiconductor layer 8, a first semiconductor layer 9 adjusted to second conductivity type, a first impurity layer 11 formed in the first semiconductor layer with first conductivity type, bipolar transistors 3 and 4 formed in the first semiconductor layer, and MIS type transistors 5 and 6. A diode is formed of a multilayer structure of the semiconductor substrate, the intrinsic semiconductor layer and the first semiconductor layer. The semiconductor device further comprises a first insulator layer 13 formed beneath the bipolar transistor at least partially, and a second insulation film layer 14 formed beneath the MIS type transistor at least partally.
|
