发明名称 BOOSTING CIRCUIT AND SEMICONDUCTOR DEVICE BUILT-IN THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a boosting circuit that is improved in starting-time stability, without increasing its consuming current. SOLUTION: A plurality of N-channel MOS transistors 41, 43, 45, 47, and 49 are connected in series between an input terminal Vin and an output terminal Vout. One-side electrodes of the MOS transistors 41, 43, 45, 47, and 49 are respectively connected to external terminals VC1-VC5, to which capacitors can be connected to generate boosting voltages. In addition, P-channel MOS transistors 51, 53, 55, 57, and 59 are respectively provided, in parallel with the transistors 41, 43, 45, 47, 49.
申请公布号 JP2002369502(A) 申请公布日期 2002.12.20
申请号 JP20010177478 申请日期 2001.06.12
申请人 OKI ELECTRIC IND CO LTD;OKI MICRO DESIGN CO LTD 发明人 SATO HISATAKE
分类号 G11C11/407;H02M3/07;(IPC1-7):H02M3/07 主分类号 G11C11/407
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