发明名称 |
NITRIDE SEMICONDUCTOR LASER |
摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser whose cleaved end face is flat and which can prevent the breakage of laser end face occurring during operation, so as to lengthen its service life as a result. SOLUTION: This nitride semiconductor laser is provided with a stress concentration suppressing layer between an active layer and a cap layer.
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申请公布号 |
JP2002368343(A) |
申请公布日期 |
2002.12.20 |
申请号 |
JP20010169440 |
申请日期 |
2001.06.05 |
申请人 |
SONY CORP |
发明人 |
TOMITANI SHIGETAKA;HINO TOMOKIMI |
分类号 |
H01S5/042;H01S5/10;H01S5/20;H01S5/32;H01S5/323;H01S5/34;H01S5/343;(IPC1-7):H01S5/343 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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