发明名称 NITRIDE SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser whose cleaved end face is flat and which can prevent the breakage of laser end face occurring during operation, so as to lengthen its service life as a result. SOLUTION: This nitride semiconductor laser is provided with a stress concentration suppressing layer between an active layer and a cap layer.
申请公布号 JP2002368343(A) 申请公布日期 2002.12.20
申请号 JP20010169440 申请日期 2001.06.05
申请人 SONY CORP 发明人 TOMITANI SHIGETAKA;HINO TOMOKIMI
分类号 H01S5/042;H01S5/10;H01S5/20;H01S5/32;H01S5/323;H01S5/34;H01S5/343;(IPC1-7):H01S5/343 主分类号 H01S5/042
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