| 摘要 |
PROBLEM TO BE SOLVED: To provide an ultra-high density data storage medium using a semiconductor compound which is suitable for a medium and a data storage cell, wherein the semiconductor compound is easily converted from crystal to amorphism and vice versa, is chemically stable even under conversion processes over a lot of cycles, and has electric characteristics easily distinguishable from an electric signal generated from an amorphous semiconductor compound. SOLUTION: The ultra-high density data storage medium is composed of one or more semiconductor films each containing the semiconductor compound selected from the group composed of an indium chalcogenide, a gallium chalcogenide, and an indium-gallium chalcogenide.
|
