| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method for restraining the insertion of a notch between reflection prevention and Al alloy films, and to provide a method for manufacturing semiconductor devices. SOLUTION: In the etching method, an object to be treated, where TiN (barrier metal) film 2, an Al alloy film 3, and TiN (antireflection) film 4 are formed from a bottom successively is etched using continuous three-level etching steps. The etching method includes a first process for etching the TiN film 4 halfway, a second process for etching the remaining portion of the TiN film 4 and the Al alloy film 3, and a third process for etching the TiN film 2.
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