| 摘要 |
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Also disclosed is a semiconductor structure incorporating a plurality of field effect transistors in a monolithic substrate wherein an amorphous oxide material overlies the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlies the amorphous oxide material, a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material and forms a vertical conductive channel having a vertical conductive pathway comprising a doped n type III-V semiconductor material, and contacts arrayed vertically along the conductive channel forming a source, gate and drain for a vertical field effect transistor.
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