| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being designed based on a simple designing guideline obtained by a simulation and being manufactured so as to easily satisfy a specified value of a radiation electric field strength without using a special component. SOLUTION: The semiconductor device comprises a ground conductive layer 11, band-like wirings 13a, 13b provided on the layer 11 via an insulating layer 12, a semiconductor chip 16 mounted directly or via the layer 12 on the layer 11, and electric leads 15a, 15b electrically connected between the wirings 13a, 13b and the chip 16. In this case, a total length LT (=LF+LW) of lengths LF of the wirings 13a, 13b and lengths LW of the leads 15a, 15b satisfies LT<=β/α, whereinα(V/m<2> ) is the radiation electric field strength per unit length of the wirings 13a, 13b or the leads 15a, 15b, andβ(V/m) is an allowable maximum radiation electric field strength. |
