METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES UTILIZING ATOMIC LAYER EPITAXY OF ORGANOMETALLIC COMPOUNDS TO DEPOSIT A METALLIC SURFACTANT LAYER

摘要

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer has lattice registry to both the underlying silicon wafer and the overlying monocrystalline material layer. Formation of a compliant substrate preferably includes utilizing enhanced epitaxy of a surfactant template layer. The surfactant template layer may be formed by depositing an organometallic compound on the accommodating buffer layer using atomic layer epitaxy. In certain preferred embodiments, the organometallic compound is an aluminum-containing compound.