| 摘要 |
PROBLEM TO BE SOLVED: To provide an exposure system capable of efficiently exposing a large-size mask pattern on a photosensitive substrate with a small scanning distance in a short time. SOLUTION: A pattern 11 formed on a mask 10 is exposed onto a photosensitive substrate 20 via a projection lens system while the mask 10 and the photosensitive substrate 20 are synchronistically scanned with respect to the projection lens system in a prescribed scanning direction. A plurality of the projection lens systems 40, 40' are arranged in the scanning direction, while a distance control means 50 is provided, which changes the distance between the projection lens systems depending on the length in the scanning direction of the pattern region formed on the mask. The projection lens systems 40, 40' are respectively constituted of a plurality of projection lens modules 41A-41C, and are arranged in the direction normal to the scanning direction. |
