| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of processing silicon, which is suitable for forming a fine pattern. SOLUTION: This method of processing silicon includes a step in which a polycrystalline silicon layer is formed on a base surface, a step in which stripe-shaped resist patterns are formed on the polycrystalline silicon layer, a step in which the polycrystalline silicon layer is etched with resist patterns as the mask to form stripe-shaped polycrystalline regions and denaturalized layers are formed on the side walls of the regions, and a step in which the denaturalized layers are removed to obtain finely formed stripe-shaped polycrystalline regions. |
