FLOATING TRAP TYPE NONVOLATILE MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To allow an erasing operation to be accurately executed even when a tunneling insulating film is thickened so as to reinforce a data holding function in a floating trap type memory cell. SOLUTION: A floating trap type nonvolatile memory cell comprises a semiconductor substrate 10, a gate electrode 27 formed on the substrate, and a tunneling insulating film 20, a charge storage layer 22, a blocking insulating film, and an impurity-doping layer formed on the substrate at both sides of a gate electrode sequentially formed between the substrate and the gate electrode. The nonvolatile memory cell further comprises at least one high dielectric film in which the permittivity of the blocking insulating film is larger than that of the tunneling insulating film.