PLASMA-ETCHING SYSTEM AND ETCHING PROCESS MANAGING METHOD

摘要

PROBLEM TO BE SOLVED: To suppress the fluctuation of the partial pressure of processing gas at the time of dry etching and to reduce a dimensional slippage. SOLUTION: A leak rate in a reaction chamber is measured before a semiconductor substrate is etched. Processing gas is introduced into a reaction chamber in a state where it is controlled to prescribed gas pressure, and it is kept a for prescribed time. Processing gas is evacuated and a pressure rise rate in the reaction chamber is measured. Thus, the partial pressure fluctuation of processing gas can be learnt by monitoring a difference between the pressure rise rate and the leakage rate.