| 发明名称 |
Semiconductor device having channel cut layers provided at different depths |
| 摘要 |
A semiconductor device includes an element isolating insulation film having different depths depending on locations where it is formed. A plurality of channel cut layers are formed in one active region in a direction of depth.
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| 申请公布号 |
US2003057498(A1) |
申请公布日期 |
2003.03.27 |
| 申请号 |
US20020218447 |
申请日期 |
2002.08.15 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YAMASHITA TOMOHIRO |
| 分类号 |
H01L21/76;H01L21/762;H01L21/8238;H01L27/08;H01L27/092;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/76 |
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