Vertical high-voltage semiconductor component

摘要

The present invention relates to a high-voltage semiconductor component having a semiconductor substrate of a first conduction type on which a semiconductor layer is provided as a drift path that takes up the reverse voltage of the semiconductor component. The semiconductor layer is either of the first conduction type or of a second conduction type that is opposite the first conduction type. The semiconductor layer is more weakly doped than the semiconductor substrate. Laterally oriented semiconductor regions of the first and second conduction types are alternately provided in the semiconductor layer. Furthermore, the present invention relates to a high-voltage semiconductor component having a MOS field-effect transistor that is formed in a semiconductor substrate and has a drift path that is connected to its drain electrode.