| 发明名称 |
HAFNIUM SILICIDE TARGET FOR FORMING GATE OXIDE FILM AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To obtain a hafnium silicide target which is suitable for forming an HfO2 /SiO2 film capable of being used as a high permitivity gate insulating film having characteristic instead of an SiO2 film and superior in resistance to embrittlement, and to provide a manufacturing method of the target. SOLUTION: The hafnium silicide target for forming a gate oxide film is composed of HfSi0.05-0.37 .
|
| 申请公布号 |
JP2003092404(A) |
申请公布日期 |
2003.03.28 |
| 申请号 |
JP20020105897 |
申请日期 |
2002.04.09 |
| 申请人 |
NIKKO MATERIALS CO LTD |
发明人 |
IRUMADA SHIYUUICHI;SUZUKI SATORU |
| 分类号 |
C22C27/00;C23C14/06;C23C14/08;C23C14/34;H01L21/314;H01L21/316;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
C22C27/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
