发明名称 ORGANOZIRCONIUM COMPOUND FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND RAW MATERIAL SOLUTION FOR FORMING PZT THIN FILM COMPRISING THE SAME COMPOUND
摘要 PROBLEM TO BE SOLVED: To provide an organozirconium compound for metal organic chemical vapor deposition having a lower decomposition temperature than that of a conventional Zr compound and the decomposition temperature approximating to that of a Pb compound, leaving a small amount of vaporization residues by the organozirconium compound alone, scarcely reacting with the Pb compound even when mixed therewith and resultantly leaving a small amount of vaporization residues. SOLUTION: This organozirconium compound for the metal organic chemical vapor deposition is represented by the formula (I) in which aβ-diketone group and a tertiary alkoxy group having a ketone group is bound to zirconium (wherein, R1 , R2 , R3 , R4 and R5 are each a 1-5C hydrocarbon group or a fluorinated hydrocarbon group; and n is an integer of 1-3).
申请公布号 JP2003104931(A) 申请公布日期 2003.04.09
申请号 JP20010303049 申请日期 2001.09.28
申请人 MITSUBISHI MATERIALS CORP 发明人 UCHIDA HIROTO;HIRAKOSO HIDEYUKI;OKAMURA SHINGO
分类号 C07C49/92;C07F7/00;C23C16/40;(IPC1-7):C07C49/92 主分类号 C07C49/92
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