LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF

摘要

The present invention discloses a low voltage difference-operated EEPROM and an operating method thereof, wherein at least one transistor structure is formed in a semiconductor substrate and each includes a first electric-conduction gate. Same type ions are implanted into a region of the semiconductor substrate, which is near interfaces of a source, a drain and the first electric-conduction gate, or ion-doped regions of the source and the drain, to increase the ion concentration thereof, whereby to reduce the voltage differences required for writing and erasing. The present invention also discloses an operating method for the low voltage difference-operated EEPROM. In addition to the EEPROM with a single gate transistor structure, the present invention also applies to the EEPROM with a single floating gate transistor structure.

主权项

1. A low voltage difference-operated electrically erasable programmable read only memory(EEPROM) comprising:
a semiconductor substrate; and at least one transistor structure formed in said semiconductor substrate and including a first dielectric layer formed on a surface of said semiconductor substrate, a first electric-conduction gate formed on said first dielectric layer, and at least two first ion-doped regions formed inside said semiconductor substrate and located at two sides of said first electric-conduction gate to function as a source and a drain, wherein regions of said first ion-doped regions or a region of said semiconductor substrate, which is near an interface of said source and said first electric-conduction gate and an interface of said drain and said first electric-conduction gate, is further implanted with the same type of ions to increase ion concentration thereof and reduce voltage differences required for writing or erasing.