| 发明名称 |
METHOD FOR FORMING PLUG IN SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: A method for forming a plug in a semiconductor device is provided to simplify a manufacturing process by application of epi-silicon growth in a plug formation, and obtain gap filling margin caused by deposition of an interlayer dielectric. CONSTITUTION: A silicon substrate(41) is provided. A gate(43) is formed on the silicon substrate. An epi-silicon layer is grown at the silicon substrate beneath the gate. An interlayer dielectric is formed on the entire surface of the resultant structure including the epi-silicon layer. The interlayer(51) is selectively patterned to form a contact hole. A conductive plug is formed at the epi-silicon layer beneath the contact hole.
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| 申请公布号 |
KR20030029398(A) |
申请公布日期 |
2003.04.14 |
| 申请号 |
KR20010061885 |
申请日期 |
2001.10.08 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, SEOK GYU;WON, DAE HUI |
| 分类号 |
H01L21/205;H01L21/28;H01L21/285;H01L21/3205;H01L21/60;H01L21/768;H01L21/8234;H01L23/52;H01L27/088;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/205 |
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