| 发明名称 |
Ferroelectric storage read-write memory |
| 摘要 |
A memory device including at least one pair of spaced apart conductors and a ferroelectric material between the pair of conductors. The pair of conductors is spaced apart a distance sufficient to permit a tunneling current therebetween.
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| 申请公布号 |
US6548843(B2) |
申请公布日期 |
2003.04.15 |
| 申请号 |
US19980190131 |
申请日期 |
1998.11.12 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WICKRAMASINGHE HEMANTHA K.;SARAF RAVI F. |
| 分类号 |
C12N15/00;G11C11/22;G11C13/02;H01L21/8246;H01L27/10;H01L27/105;H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L29/76 |
主分类号 |
C12N15/00 |
| 代理机构 |
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