发明名称 |
Semiconductor device and process for producing the same |
摘要 |
To provide a semiconductor device having a large aperture ratio, in which an auxiliary capacitance of a large capacity is provided in each pixel.Capacitance wiring 102 comprising a tantalum film is formed on a substrate 101 having an insulating surface, and a tantalum oxide film 103 is formed by heat oxidation thereof. An active layer 104 comprising a semiconductor thin film is formed, and an auxiliary capacitance comprising the structure obtained by sandwiching the tantalum oxide film 103 with a part of the active layer 104 and the capacitance wiring 102 is formed. The active layer 104 functions as an active layer of a top-gate TFT.
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申请公布号 |
US6552362(B2) |
申请公布日期 |
2003.04.22 |
申请号 |
US20020087795 |
申请日期 |
2002.03.05 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI HISASHI;FUJIMOTO ETSUKO |
分类号 |
G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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