| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser, together with a module using it, where an active layer with lattice distortion less than 2% in thickness average is provided on a GaAs substrate usable at a long wavelength band equal to 1.3 μm or longer. SOLUTION: The semiconductor laser element comprises a first semiconductor layer 5 and a second semiconductor layer 4 which form a type II hetero junction, with the lower end of conductive band energy of the first semiconductor layer 5 higher than that of the second semiconductor layer 4. A third semiconductor barrier layer 6 is provided on each side of the type II hetero junction. The second semiconductor layer 6 is provided on each side of the first semiconductor layer 5. The thickness of the semiconductor layer 5 is such that a wave function 58 of electron of a quantum well formed on the conductive band side combines by serving the second semiconductor layer 4 as a well layer. |
