| 摘要 |
PROBLEM TO BE SOLVED: To reduce resistance of a word line, contact resistance of a diffused layer with a retrieved electrode, the size of a DRAM cell, to suppress a junction leakage and to assure a pressure resistance between the word line and the electrode, and to stabilize transistor characteristics in a DRAM. SOLUTION: The semiconductor device comprises the word line 18 embedded in a groove 14 formed on a semiconductor substrate 11 via a gate insulating film 16, and a diffused layer 19 formed on the surface side of the substrate 11 at the sidewall of the groove 14. The semiconductor device further comprises a silicide layer 21 formed on the upper layer of the word line 18, a stopper insulating film 75 formed to embed the groove 14 on the silicide layer 21, and the retrieved electrode 24 connected to the diffused layer 19 in the state in which the electrode 24 is overlapped on the word line 18 via the stopper insulating film 27.
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