发明名称 WAFER PROCESSING METHOD
摘要 A wafer having a substrate and a functional layer formed on the front side of the substrate is processed by attaching a protective tape curable by an external stimulation to the front side of the functional layer. The substrate is cut from the back side along each division line by using a cutting blade, thereby forming a cut groove having a depth not reaching the functional layer, with a part of the substrate left between the bottom of the cut groove and the functional layer. A laser beam is applied along the cut groove, thereby dividing the remaining part of the substrate to divide the wafer into device chips. When the groove is formed, an uncut portion in which the cut groove is not formed is left in a peripheral marginal area of the wafer.
申请公布号 US2016343614(A1) 申请公布日期 2016.11.24
申请号 US201615151143 申请日期 2016.05.10
申请人 DISCO CORPORATION 发明人 Ogawa Yuki;Nagaoka Kensuke;Obata Tsubasa;Ban Yuri
分类号 H01L21/78;H01L21/304;H01L21/683;H01L23/544 主分类号 H01L21/78
代理机构 代理人
主权项 1. A wafer processing method for processing a wafer including a substrate and a functional layer formed on a front side of said substrate, said functional layer being formed with a plurality of crossing division lines and a plurality of devices individually formed in a plurality of separate regions defined by said crossing division lines, said wafer having a device area where said devices are formed and a peripheral marginal area surrounding said device area, said wafer processing method comprising: a protective tape attaching step of attaching a protective tape curable by an external stimulation to a front side of said functional layer; a cut groove forming step of cutting said substrate from a back side thereof along each division line by using a cutting blade after performing said protective tape attaching step, thereby forming a cut groove having a depth not reaching said functional layer with a part of said substrate left between a bottom of said cut groove and said functional layer; and a dividing step of applying a laser beam having an absorption wavelength to said substrate along said cut groove after performing said cut groove forming step, thereby dividing said part of said substrate left between the bottom of said cut groove and said functional layer to divide said wafer into a plurality of device chips; wherein in said cut groove forming step, an uncut portion in which said cut groove is not formed is left in said peripheral marginal area of said wafer.
地址 Tokyo JP