| 摘要 |
PROBLEM TO BE SOLVED: To enhance heat dissipation properties of a semiconductor laser bonded to a heat sink by junction-down. SOLUTION: Semiconductor layers 11-14 including an active layer 12 and a cap layer 14 are formed in layer on a semiconductor substrate 10 and the active layer side is mounted on the heat sink 20 through solder 21. In such a semiconductor laser element, protrusions and recesses are formed on the surface of the cap layer 14. When the semiconductor substrate 10 is mounted on the heat sink 20, the protrusions and recesses formed on the surface of the cap layer 14 are filled with the solder 21. COPYRIGHT: (C)2003,JPO
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