| 摘要 |
PROBLEM TO BE SOLVED: To improve effect for detecting a defective memory cell by shortening a measuring time of a memory. SOLUTION: A coexistent semiconductor memory in which a memory circuit 1 and a logic circuit 2 are incorporated and having a common terminal 10 for inputting/outputting data and inputting an address in the memory circuit 1, is provided with a test control circuit 9 inputting address data inputted to an input pin 13 for the logic circuit 2 to an address storing register 6 of the memory circuit 1. In data input/output test of this coexistent semiconductor memory, address input and data input for the memory circuit 1 are performed simultaneously by giving an address signal from an input pin 13 for the memory circuit 2 and giving data input/output from the common terminal 10 of the memory circuit 1 respectively. Thereby, the memory circuit can be measured with one cycle. COPYRIGHT: (C)2003,JPO
|
