发明名称 Current confinement structure for vertical cavity surface emitting laser
摘要 A vertical cavity surface emitting laser (VCSEL) structure and fabrication method therefor are described in which a subsurface air, gas, or vacuum current confinement method is used to restrict the area of electrical flow in the active region. Using vertical hollow shafts to access a subsurface current confinement layer, a selective lateral etching process is used to form a plurality of subsurface cavities in the current confinement layer, the lateral etching process continuing until the subsurface cavities laterally merge to form a single subsurface circumferential cavity that surrounds a desired current confinement zone. Because the subsurface circumferential cavity is filled with air, gas, or vacuum, the stresses associated with oxidation-based current confinement methods are avoided. Additionally, because the confinement is achieved by subsurface cavity structures, overall mechanical strength of the current-confining region is maintained.
申请公布号 US6589805(B2) 申请公布日期 2003.07.08
申请号 US20020106991 申请日期 2002.03.26
申请人 GAZILLION BITS, INC. 发明人 ZHU ZUHUA;WANG SHIH-YUAN
分类号 H01L33/00;H01S5/183;H01S5/20;H04B10/155;(IPC1-7):H01L21/302 主分类号 H01L33/00
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