发明名称 Negative deep ultraviolet photoresist
摘要 The present invention relates to a novel negative working deep uv photoresist that is developable in an aqueous alkaline solution, and comprises a fluorinated polymer, photoactive compound and a crosslinking agent. The photoresist composition is particularly useful for patterning with exposure wavelengths of 193 nm and 157 nm.
申请公布号 US2003129527(A1) 申请公布日期 2003.07.10
申请号 US20020042531 申请日期 2002.01.09
申请人 KUDO TAKANORI;PADMANABAN MUNIRATHNA;DAMMEL RALPH R.;TOUKY MEDHAT A. 发明人 KUDO TAKANORI;PADMANABAN MUNIRATHNA;DAMMEL RALPH R.;TOUKY MEDHAT A.
分类号 C08F32/08;G03F7/004;G03F7/033;G03F7/038;G03F7/38;H01L21/027;(IPC1-7):G03F7/004 主分类号 C08F32/08
代理机构 代理人
主权项
地址