发明名称 |
Tailoring nanocrystalline diamond film properties |
摘要 |
A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.
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申请公布号 |
US6592839(B2) |
申请公布日期 |
2003.07.15 |
申请号 |
US19990255919 |
申请日期 |
1999.02.23 |
申请人 |
THE UNIVERSITY OF CHICAGO |
发明人 |
GRUEN DIETER M.;MCCAULEY THOMAS G.;ZHOU DAN;KRAUSS ALAN R. |
分类号 |
C01B31/06;C23C14/06;C23C14/22;C23C16/27;C23C16/448;C30B23/00;C30B23/02;C30B25/10;C30B33/00;H01J9/02;(IPC1-7):B01J3/06;B01J3/08;C23C16/26;C23C16/32 |
主分类号 |
C01B31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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