发明名称 Tailoring nanocrystalline diamond film properties
摘要 A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.
申请公布号 US6592839(B2) 申请公布日期 2003.07.15
申请号 US19990255919 申请日期 1999.02.23
申请人 THE UNIVERSITY OF CHICAGO 发明人 GRUEN DIETER M.;MCCAULEY THOMAS G.;ZHOU DAN;KRAUSS ALAN R.
分类号 C01B31/06;C23C14/06;C23C14/22;C23C16/27;C23C16/448;C30B23/00;C30B23/02;C30B25/10;C30B33/00;H01J9/02;(IPC1-7):B01J3/06;B01J3/08;C23C16/26;C23C16/32 主分类号 C01B31/06
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