| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device capable of reducing a dark current by expediting lowering of interface levels due to a hydrogenation, thereby improving the S/N ratio and improving an image quality, and to provide a method for manufacturing the same SOLUTION: The solid state imaging device of a CMOS type comprises main wiring layers 41b, 42b containing aluminum for selecting a pixel and propagating a signal in a pixel unit. The imaging device further comprises adhesive property layers 31a, 32a of barrier metals 41a, 41c, 42a, 42c for preventing the layers 41b, 42b from being reacted with conductive layers 31, 32b made of tungsten or the like for embedding contact holes, using a tungsten nitride. COPYRIGHT: (C)2003,JPO
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