发明名称 |
Enhancement of an interconnect |
摘要 |
A method, apparatus, system, and machine-readable medium for an interconnect structure in a semiconductor device and its method of formation is disclosed. Embodiments comprise a carbon-doped and silicon-doped interconnect having a concentration of silicon to avoid to forming a copper silicide layer between an interconnect and a passivation layer. Some embodiments provide unexpected results in electromigration reliability in regards to activation energy and/or mean time to failure.
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申请公布号 |
US2003137050(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
US20020292326 |
申请日期 |
2002.11.12 |
申请人 |
CHAMBERS STEPHEN T.;DUBIN VALERY M.;OTT ANDREW W.;HAU-RIEGE CHRISTINE S. |
发明人 |
CHAMBERS STEPHEN T.;DUBIN VALERY M.;OTT ANDREW W.;HAU-RIEGE CHRISTINE S. |
分类号 |
H01L21/288;H01L21/768;(IPC1-7):H01L21/44;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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