LITHOGRAPHY APPARATUS AND DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a lithography apparatus which is suitable for use in a discharge plasma source of extreme ultraviolet ray or a laser generation plasma source and restricts that gas in the source or near the source enters the other portion of the apparatus. SOLUTION: The lithography apparatus is provided with a first space including a plasma source and source gas to largely absorb radiation in the wavelength of the projected beam of the apparatus. A second space including buffer gas of lower absorption in the wavelength of the projected beam of the apparatus restricts that gas enters the remaining portion of the lithography system. The pressure of the buffer gas is equal to or lower than the pressure of the source gas. COPYRIGHT: (C)2003,JPO