| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a threshold voltage of a P-HEMT having an embedded P-type gate structure becomes uniform at any position in the surface of a wafer. SOLUTION: The method for manufacturing steps of sequentially simultaneously forming a buffer layer 12, a channel layer 13, a space layer 14, an electron supply layer 15, a P-type gate diffused layer 16 and an ohmic cap layer 17 by epitaxial growth, removing the layer 17 except for a region formed with a source electrode and a drain electrode by etching, depositing an insulating film 18 as a selective mask at a P-type gate diffusing time, removing the film 18 of a P-type gate forming region 90 and a partial region 100 other than an element region, diffusing the impurity in the region 90 to form a P-type gate region, and forming a gate electrode on the P-type gate region. COPYRIGHT: (C)2003,JPO
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