MANUFACTURING METHOD FOR SILICON EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To manufacture a silicon epitaxial wafer by suitably forming an oxide film for automatic doping prevention to a diffusion wafer. SOLUTION: In the manufacturing method of the silicon epitaxial wafer, a silicon epitaxial layer 9 is vapor grown on the main surface of the diffusion wafer 7 and the silicon epitaxial wafer 10 is manufactured. Of a main back surface side oxide film 42 formed on the main back surface side of the diffusion wafer 7 at the end of diffusion, the remaining part 42b from which a surface layer is removed is used for the automatic doping prevention, and the silicon epitaxial layer 9 is vapor grown on the main surface of the diffusion wafer 7. COPYRIGHT: (C)2003,JPO