| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device equipped with a redundant circuit to cope with refined process rules. SOLUTION: The semiconductor memory device having a redundant memory cell to be used for replacement of a defect memory cell found in memory cells, is equipped with a redundant circuit 10 for replacement of a defect memory cell to a redundant memory cell. The redundant circuit 10 includes a fuse pre- decode part 40, a fuse decode part 20 connected to the fuse pre-decode part 40 via a fuse pre-decode signal line, and an address decode part 30 connected to the fuse decode part 20 via a fuse decode signal line. COPYRIGHT: (C)2003,JPO
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