| 摘要 |
PROBLEM TO BE SOLVED: To provide a DRAM device which can operate at higher speed and also realize miniaturization. SOLUTION: Two types of command interval specifications are defined as first and second command interval specifications. The first command interval specification is defined as the relationship between a preceding command and a following command that are issued for the same bank, while the second command interval specification is defined as the relationship between a preceding command and a following command that are issued for different banks, respectively. As for the second command interval specification, since target banks are different between a preceding command and a following command, the following command is executed during the column circuits precharge after the preceding command. Therefore, in the case of the second command interval specification, a command interval is substantially shortened. In addition, pairs of banks are defined as bank pairs, and are applied the first and the second command interval specifications, so that the DRAM device is small-sized. COPYRIGHT: (C)2003,JPO
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