Thin film magnetic memory device applying a magnetic field to write data

摘要

Each write word line has one end connected by a write drive circuit to a power supply voltage selectively and the other end to a ground voltage. The write drive circuit is staggered in arrangement and thus connected to either one or the other end of each write word line. A write drive circuit has a first transistor and a second transistor. When a memory cell row corresponding to the write drive circuit is selected the first transistor connects a corresponding write word line to the power supply voltage to supply a data writing current and when an adjacent row is selected the transistor connects the corresponding write word line to the power supply voltage. The second transistor passes a magnetic field canceling current, which cancels a magnetic field leaking from a data writing current of an adjacent row.