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发明名称
Etch-stopped SOI back-gate contact
摘要
The buried oxide region has a layer added which etches selectively with respect to oxide, allowing the contacts to a gate or to a back gate to be created without overetching into the buried oxide region.
申请公布号
US2003173621(A1)
申请公布日期
2003.09.18
申请号
US20030417627
申请日期
2003.04.17
申请人
HOUSTON THEODORE W.
发明人
HOUSTON THEODORE W.
分类号
H01L21/311;H01L27/12;(IPC1-7):H01L27/01
主分类号
H01L21/311
代理机构
代理人
主权项
地址
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