| 摘要 |
PROBLEM TO BE SOLVED: To aim at improving a yield of products by preventing generations of particles as well as by suppressing solvent vapor liquefaction within a processing container due to difference in pressure. SOLUTION: A substrate-processing method for processing a semiconductor wafer W by means of supplying an ozone gas that is a processing gas and water vapor that is solvent vapor to the semiconductor wafer W housed inside a processing container 10, wherein O<SB>3</SB>gas is fed into the processing container 10 before the semiconductor wafer W is processed by feeding the ozone gas and the water vapor into the processing container 10 and then shut-off valves V11, V12 for a waste solution that are switching means of an exhaust system of the processing container 10 are closed to apply pressure to the inside of the processing container 10, so that the difference between pressure of the inside of the processing container 10 and the water vapor fed into the processing container 10 afterward is decreased as far as possible. Thereby, the generation of the particles as well as the liquefaction of the water vapor inside the processing container 10 can be suppressed. COPYRIGHT: (C)2003,JPO |
